2N7002H6327XTSA2 vs BSS308PEH6327XTSA1 Comparison
Detailed side-by-side comparison of 2N7002H6327XTSA2 by Infineon and BSS308PEH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 β ActiveSpecification Comparison
| Parameter | 2N7002H6327XTSA2 | BSS308PEH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.08 | $0.11 |
| Transistor Type | N-Channel MOSFET | P-Channel Enhancement Mode MOSFET |
| Technology | OptiMOS (Planar) | β |
| Drain-Source Voltage (VDS) | 60 V | -30 V |
| Continuous Drain Current (ID) | 300 mA (Ta) | -2 A (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | 3 ohm max @ VGS = 10 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: gate threshold voltage] |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Operating Temperature Range | -55C to +150C (Tj) | -55 Β°C to +150 Β°C |
| Package | PG-SOT23 (SOT-23-3) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Mode | Enhancement | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Qualification | Industrial / Commercial Grade | AEC-Q101 Automotive |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOS P (small signal / small power MOSFET) |
| RDS(on) Max | β | 80 mΞ© at VGS = -10 V |
| Gate-Source Voltage (VGS) Max | β | +/-20 V |
| Package / Case | β | PG-SOT23 (SOT-23-3) |
| Number of Pins | β | 3 |
| Packaging | β | Tape & Reel (T/R) |
| Standard Reel Quantity | β | 3000 pcs |