2N7002H6327XTSA2 vs BSS308PEH6327XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 2N7002H6327XTSA2 sa pamamagitan ng Infineon at BSS308PEH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | 2N7002H6327XTSA2 | BSS308PEH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET | P-Channel Enhancement Mode MOSFET |
| Technology | OptiMOS (Planar) | — |
| Drain-Source Voltage (VDS) | 60 V | -30 V |
| Continuous Drain Current (ID) | 300 mA (Ta) | -2 A (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | 3 ohm max @ VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: gate threshold voltage] |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Hanay ng Temperature na Operasyon | -55C to +150C (Tj) | -55 °C to +150 °C |
| Packhaging | PG-SOT23 (SOT-23-3) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Channel Mode | Enhancement | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Qualification | Industrial / Commercial Grade | AEC-Q101 Automotive |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS P (small signal / small power MOSFET) |
| RDS(on) Max | — | 80 mΩ at VGS = -10 V |
| Gate-Source Voltage (VGS) Max | — | +/-20 V |
| Packhaging / Kaso | — | PG-SOT23 (SOT-23-3) |
| Bilang ng Pins | — | 3 |
| Packaging | — | Tape & Reel (T/R) |
| Standard Reel Quantity | — | 3000 pcs |