2N7002H6327XTSA2 vs BSS308PEH6327XTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci 2N7002H6327XTSA2 disebabkan oleh Infineon dan BSS308PEH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 ✓ AktifPengandingan Spesifikasi
| Parametr | 2N7002H6327XTSA2 | BSS308PEH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | P-Channel Enhancement Mode MOSFET |
| Technology | OptiMOS (Planar) | — |
| Drain-Source Voltage (VDS) | 60 V | -30 V |
| Continuous Drain Current (ID) | 300 mA (Ta) | -2 A (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | 3 ohm max @ VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: gate threshold voltage] |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Gambaran Suhu Operasi | -55C to +150C (Tj) | -55 °C to +150 °C |
| Kemasan | PG-SOT23 (SOT-23-3) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Channel Mode | Enhancement | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Qualification | Industrial / Commercial Grade | AEC-Q101 Automotive |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS P (small signal / small power MOSFET) |
| RDS(on) Max | — | 80 mΩ at VGS = -10 V |
| Gate-Source Voltage (VGS) Max | — | +/-20 V |
| Kemasan / Case | — | PG-SOT23 (SOT-23-3) |
| Bilangan Pin | — | 3 |
| Packaging | — | Tape & Reel (T/R) |
| Standard Reel Quantity | — | 3000 pcs |