AS4C512M16D4A-62BIN vs K4A8G165WB-BIWE Perbandingan
Perbandingan bersamaan detil AS4C512M16D4A-62BIN dari Alliance Memory dan K4A8G165WB-BIWE dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Alliance Memory
AS4C512M16D4A-62BIN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BIN ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | AS4C512M16D4A-62BIN | K4A8G165WB-BIWE |
|---|---|---|
| Merek | Alliance Memory | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 8 Gbit | — |
| Organisasi | 512M x 16 | 512M x 16 |
| Clock Rate | 1600 MHz | — |
| Laju Data | 3200 Mbps per pin | 3200 Mbps |
| Tegangan Pemuat | 1.14V ~ 1.26V (nominal 1.2V) | 1.2 V |
| Suhu Kerja | -40°C to +95°C | -40°C to +95°C |
| Paket | 96-FBGA (7.5x13mm) | 96-ball FBGA |
| Antarmuka | POD (Pseudo Open Drain) | Parallel |
| Latensi CAS | Programmable (e.g., 22 cycles) | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8 (with burst chop 4) | 8, 16 |
| Refresh | Auto-refresh and self-refresh | Auto-refresh, Self-refresh |
| RoHS | Compliant | Compliant |
| Tipe Mounting | Surface Mount | Surface Mount |
| Lead Free | Yes | — |
| Density | — | 8 Gb |
| On-Die Termination | — | Yes |
| Jumlah Pin | — | 96 |