BSC084P03NS3GATMA1 vs BSC022N04LS6ATMA1 Comparison

Detailed side-by-side comparison of BSC084P03NS3GATMA1 by Infineon and BSC022N04LS6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC084P03NS3GATMA1 BSC022N04LS6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -30 V 40 V
Continuous Drain Current (Ta) 14.9 A —
Continuous Drain Current (Tc) 78.6 A —
Rds(on) max @ VGS = -10 V 6.1 mOhm —
Rds(on) max @ VGS = -2.5 V [DATA_NEEDED: Rds(on) at 2.5V] —
Gate Threshold Voltage (VGS(th) typ) -1.7 V —
Total Gate Charge (Qg) 58 nC @ VGS = -10 V —
Input Capacitance (Ciss) 3.19 nF —
Output Capacitance (Coss) 110 pF —
Reverse Transfer Capacitance (Crss) 1.52 nF —
Power Dissipation (Ta) 2.5 W 3 W
Power Dissipation (Tc) 69 W 79 W
Operating Temperature Range -55C to +150C —
Package PG-TDSON-8-5 (SuperSO8 5x6) SuperSO8 5x6 (PG-TDSON-8-1)
Mounting Type Surface Mount Surface Mount
Technology Family OptiMOS P3 —
RoHS Status Compliant Compliant
MSL Level 1 (unlimited) —
Manufacturer — Infineon Technologies
Technology — OptiMOS™ 6 (N-channel trench)
Continuous Drain Current (ID) at Ta — 27 A
Continuous Drain Current (ID) at Tc — 100 A
Maximum Pulsed Drain Current (IDM) — 139 A
On-Resistance RDS(on) max — 2.2 mOhm at VGS=10 V
Channel Type — N-Channel
Pin Count — 8
Operating Temperature — -55 C to +175 C (junction)

Datasheets & Resources

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