BSC084P03NS3GATMA1 vs BSC022N04LS6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC084P03NS3GATMA1 disebabkan oleh Infineon dan BSC022N04LS6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC084P03NS3GATMA1 - P-Ch 30V 78.6A OptiMOS P3 MOSFET | Infineon
BSC084P03NS3GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC084P03NS3GATMA1 | BSC022N04LS6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -30 V | 40 V |
| Continuous Drain Current (Ta) | 14.9 A | — |
| Continuous Drain Current (Tc) | 78.6 A | — |
| Rds(on) max @ VGS = -10 V | 6.1 mOhm | — |
| Rds(on) max @ VGS = -2.5 V | [DATA_NEEDED: Rds(on) at 2.5V] | — |
| Gate Threshold Voltage (VGS(th) typ) | -1.7 V | — |
| Total Gate Charge (Qg) | 58 nC @ VGS = -10 V | — |
| Input Capacitance (Ciss) | 3.19 nF | — |
| Output Capacitance (Coss) | 110 pF | — |
| Reverse Transfer Capacitance (Crss) | 1.52 nF | — |
| Power Dissipation (Ta) | 2.5 W | 3 W |
| Power Dissipation (Tc) | 69 W | 79 W |
| Gambaran Suhu Operasi | -55C to +150C | — |
| Kemasan | PG-TDSON-8-5 (SuperSO8 5x6) | SuperSO8 5x6 (PG-TDSON-8-1) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology Family | OptiMOS P3 | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (unlimited) | — |
| Manufacturer | — | Infineon Technologies |
| Technology | — | OptiMOS™ 6 (N-channel trench) |
| Continuous Drain Current (ID) at Ta | — | 27 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Maximum Pulsed Drain Current (IDM) | — | 139 A |
| On-Resistance RDS(on) max | — | 2.2 mOhm at VGS=10 V |
| Channel Type | — | N-Channel |
| Kiraan Pin | — | 8 |
| Suhu Operasi | — | -55 C to +175 C (junction) |