BSC084P03NS3GATMA1 vs BSC022N04LS6ATMA1 Perbandingan

Perbandingan bersamaan detil BSC084P03NS3GATMA1 dari Infineon dan BSC022N04LS6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC084P03NS3GATMA1 BSC022N04LS6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -30 V 40 V
Continuous Drain Current (Ta) 14.9 A —
Continuous Drain Current (Tc) 78.6 A —
Rds(on) max @ VGS = -10 V 6.1 mOhm —
Rds(on) max @ VGS = -2.5 V [DATA_NEEDED: Rds(on) at 2.5V] —
Gate Threshold Voltage (VGS(th) typ) -1.7 V —
Total Gate Charge (Qg) 58 nC @ VGS = -10 V —
Input Capacitance (Ciss) 3.19 nF —
Output Capacitance (Coss) 110 pF —
Reverse Transfer Capacitance (Crss) 1.52 nF —
Power Dissipation (Ta) 2.5 W 3 W
Power Dissipation (Tc) 69 W 79 W
Rentang Suhu Kerja -55C to +150C —
Paket PG-TDSON-8-5 (SuperSO8 5x6) SuperSO8 5x6 (PG-TDSON-8-1)
Tipe Mounting Surface Mount Surface Mount
Technology Family OptiMOS P3 —
Status RoHS Compliant Compliant
Level MSL 1 (unlimited) —
Manufacturer — Infineon Technologies
Technology — OptiMOS™ 6 (N-channel trench)
Continuous Drain Current (ID) at Ta — 27 A
Continuous Drain Current (ID) at Tc — 100 A
Maximum Pulsed Drain Current (IDM) — 139 A
On-Resistance RDS(on) max — 2.2 mOhm at VGS=10 V
Channel Type — N-Channel
Jumlah Pin — 8
Suhu Kerja — -55 C to +175 C (junction)

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