BSC084P03NS3GATMA1 vs BSC022N04LS6ATMA1 比較

詳細並排比較 BSC084P03NS3GATMA1 由 Infineon 與 BSC022N04LS6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC084P03NS3GATMA1 BSC084P03NS3GATMA1 - P-Ch 30V 78.6A OptiMOS P3 MOSFET | Infineon

BSC084P03NS3GATMA1 - P-Ch 30V 78.6A OptiMOS P3 MOSFET | Infineon

BSC084P03NS3GATMA1 ✓ 啟用中
Infineon
BSC022N04LS6ATMA1 BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon

BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon

BSC022N04LS6ATMA1 ✓ 啟用中

規格比較

參數 BSC084P03NS3GATMA1 BSC022N04LS6ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -30 V 40 V
Continuous Drain Current (Ta) 14.9 A —
Continuous Drain Current (Tc) 78.6 A —
Rds(on) max @ VGS = -10 V 6.1 mOhm —
Rds(on) max @ VGS = -2.5 V [DATA_NEEDED: Rds(on) at 2.5V] —
Gate Threshold Voltage (VGS(th) typ) -1.7 V —
Total Gate Charge (Qg) 58 nC @ VGS = -10 V —
Input Capacitance (Ciss) 3.19 nF —
Output Capacitance (Coss) 110 pF —
Reverse Transfer Capacitance (Crss) 1.52 nF —
Power Dissipation (Ta) 2.5 W 3 W
Power Dissipation (Tc) 69 W 79 W
工作溫度範圍 -55C to +150C —
封裝 PG-TDSON-8-5 (SuperSO8 5x6) SuperSO8 5x6 (PG-TDSON-8-1)
安裝類型 Surface Mount Surface Mount
Technology Family OptiMOS P3 —
RoHS 狀態 Compliant Compliant
MSL 等級 1 (unlimited) —
Manufacturer — Infineon Technologies
Technology — OptiMOS™ 6 (N-channel trench)
Continuous Drain Current (ID) at Ta — 27 A
Continuous Drain Current (ID) at Tc — 100 A
Maximum Pulsed Drain Current (IDM) — 139 A
On-Resistance RDS(on) max — 2.2 mOhm at VGS=10 V
Channel Type — N-Channel
腳位數 — 8
工作溫度 — -55 C to +175 C (junction)

資料表與資源

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