BSS87H6327FTSA1 vs BSP88H6327XTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS87H6327FTSA1 disebabkan oleh Infineon dan BSP88H6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSS87H6327FTSA1 | BSP88H6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel enhancement-mode | — |
| Drain-Source Voltage (VDS) | 240 V | 240 V |
| Continuous Drain Current (ID) | 260 mA (Ta) | 350 mA at Ta=25 C |
| Power Dissipation (PD) | 1 W (Ta) | 1.8 W at Ta=25 C |
| Drain-Source On-Resistance (RDS(on)) | 6 ohm max at VGS=10V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) min/typ/max] |
| Kemasan | PG-SOT89-4-2 (SOT-89) | PG-SOT223-4 (SOT-223-3) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +150C (junction) | — |
| Kiraan Pin | 3 (Gate / Drain / Source) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Status RoHS | Compliant | — |
| Lead-Free / Pb-Free | Yes (Pb-free plating) | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Process Technology | Vertical DMOS | — |
| Jenis Transistor | — | N-Channel MOSFET |
| On-State Resistance (RDS(on)) | — | 6 ohm typical at VGS=10 V |
| Configuration | — | Single |
| Suhu Operasi | — | -55 C to +150 C |
| Technology | — | SIPMOS (planar enhancement mode) |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Drain Tab Connection | — | SOT-223 tab is drain |