BSS87H6327FTSA1 vs BSP88H6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSS87H6327FTSA1 dari Infineon dan BSP88H6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSS87H6327FTSA1 | BSP88H6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel enhancement-mode | — |
| Drain-Source Voltage (VDS) | 240 V | 240 V |
| Continuous Drain Current (ID) | 260 mA (Ta) | 350 mA at Ta=25 C |
| Power Dissipation (PD) | 1 W (Ta) | 1.8 W at Ta=25 C |
| Drain-Source On-Resistance (RDS(on)) | 6 ohm max at VGS=10V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) min/typ/max] |
| Paket | PG-SOT89-4-2 (SOT-89) | PG-SOT223-4 (SOT-223-3) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +150C (junction) | — |
| Jumlah Pin | 3 (Gate / Drain / Source) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Status RoHS | Compliant | — |
| Lead-Free / Pb-Free | Yes (Pb-free plating) | — |
| Level MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Process Technology | Vertical DMOS | — |
| Tipe Transistor | — | N-Channel MOSFET |
| On-State Resistance (RDS(on)) | — | 6 ohm typical at VGS=10 V |
| Configuration | — | Single |
| Suhu Kerja | — | -55 C to +150 C |
| Technology | — | SIPMOS (planar enhancement mode) |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Drain Tab Connection | — | SOT-223 tab is drain |