BSS87H6327FTSA1 vs BSP88H6327XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSS87H6327FTSA1 sa pamamagitan ng Infineon at BSP88H6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSS87H6327FTSA1 | BSP88H6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel enhancement-mode | — |
| Drain-Source Voltage (VDS) | 240 V | 240 V |
| Continuous Drain Current (ID) | 260 mA (Ta) | 350 mA at Ta=25 C |
| Power Dissipation (PD) | 1 W (Ta) | 1.8 W at Ta=25 C |
| Drain-Source On-Resistance (RDS(on)) | 6 ohm max at VGS=10V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) min/typ/max] |
| Packhaging | PG-SOT89-4-2 (SOT-89) | PG-SOT223-4 (SOT-223-3) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | — |
| Bilang ng Pin | 3 (Gate / Drain / Source) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Tindminan RoHS | Compliant | — |
| Lead-Free / Pb-Free | Yes (Pb-free plating) | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Process Technology | Vertical DMOS | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| On-State Resistance (RDS(on)) | — | 6 ohm typical at VGS=10 V |
| Configuration | — | Single |
| Temperature na Operasyon | — | -55 C to +150 C |
| Technology | — | SIPMOS (planar enhancement mode) |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Drain Tab Connection | — | SOT-223 tab is drain |