CSD19534Q5A vs CSD18503Q5A 比較

詳細並排比較 CSD19534Q5A 由 Texas Instruments 與 CSD18503Q5A 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Texas Instruments
CSD19534Q5A CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments

CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments

CSD19534Q5A ✓ 啟用中
Texas Instruments
CSD18503Q5A CSD18503Q5A - 40V N-Channel NexFET MOSFET 4.3mOhm | Texas Instruments

CSD18503Q5A - 40V N-Channel NexFET MOSFET 4.3mOhm | Texas Instruments

CSD18503Q5A ✓ 啟用中

規格比較

參數 CSD19534Q5A CSD18503Q5A
品牌 Texas Instruments Texas Instruments
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Technology NexFET (Power MOSFET) NexFET
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 44 A —
On-Resistance RDS(on) 12.6 mΩ (typ per datasheet description) —
Power Dissipation (Ta) 3.2 W 3.1 W
Power Dissipation (Tc) 63 W 120 W
封裝 8-VSONP (5x6 mm) with exposed pad 8-VSONP (DQJ), 5 mm x 6 mm
安裝類型 Surface Mount Surface Mount
工作溫度範圍 [DATA_NEEDED: operating temperature range] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg at VGS=10V] —
MSL 等級 1-260C-UNLIM —
RoHS 狀態 Compliant [DATA_NEEDED: RoHS status]
腳位數 8 —
Polarity — N-Channel
Drain-Source Voltage (VDS) — 40 V
On-Resistance (RDS(on)) — 4.3 mOhm (3.4 mOhm typical)
Continuous Drain Current (Ta) — 19 A
Continuous Drain Current (Tc) — 100 A
工作接面溫度 — -55C to +150C
Configuration — Single
Gate Charge — [DATA_NEEDED: Qg]
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
腳位數 — 8

資料表與資源

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