CSD19534Q5A vs CSD18503Q5A Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci CSD19534Q5A disebabkan oleh Texas Instruments dan CSD18503Q5A disebabkan oleh Texas Instruments. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Texas Instruments
CSD19534Q5A CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments

CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments

CSD19534Q5A ✓ Aktif

Pengandingan Spesifikasi

Parametr CSD19534Q5A CSD18503Q5A
Merek Texas Instruments Texas Instruments
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology NexFET (Power MOSFET) NexFET
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 44 A —
On-Resistance RDS(on) 12.6 mΩ (typ per datasheet description) —
Power Dissipation (Ta) 3.2 W 3.1 W
Power Dissipation (Tc) 63 W 120 W
Kemasan 8-VSONP (5x6 mm) with exposed pad 8-VSONP (DQJ), 5 mm x 6 mm
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg at VGS=10V] —
Aras MSL 1-260C-UNLIM —
Status RoHS Compliant [DATA_NEEDED: RoHS status]
Kiraan Pin 8 —
Polarity — N-Channel
Drain-Source Voltage (VDS) — 40 V
On-Resistance (RDS(on)) — 4.3 mOhm (3.4 mOhm typical)
Continuous Drain Current (Ta) — 19 A
Continuous Drain Current (Tc) — 100 A
Suhu Hubungan Operasi — -55C to +150C
Configuration — Single
Gate Charge — [DATA_NEEDED: Qg]
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Bilangan Pin — 8

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