CSD19534Q5A vs CSD18503Q5A Perbandingan
Perbandingan bersamaan detil CSD19534Q5A dari Texas Instruments dan CSD18503Q5A dari Texas Instruments. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Texas Instruments
CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments
CSD19534Q5A ✓ AktifTexas Instruments
CSD18503Q5A - 40V N-Channel NexFET MOSFET 4.3mOhm | Texas Instruments
CSD18503Q5A ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | CSD19534Q5A | CSD18503Q5A |
|---|---|---|
| Merek | Texas Instruments | Texas Instruments |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | NexFET (Power MOSFET) | NexFET |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 44 A | — |
| On-Resistance RDS(on) | 12.6 mΩ (typ per datasheet description) | — |
| Power Dissipation (Ta) | 3.2 W | 3.1 W |
| Power Dissipation (Tc) | 63 W | 120 W |
| Paket | 8-VSONP (5x6 mm) with exposed pad | 8-VSONP (DQJ), 5 mm x 6 mm |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at VGS=10V] | — |
| Level MSL | 1-260C-UNLIM | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Jumlah Pin | 8 | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| On-Resistance (RDS(on)) | — | 4.3 mOhm (3.4 mOhm typical) |
| Continuous Drain Current (Ta) | — | 19 A |
| Continuous Drain Current (Tc) | — | 100 A |
| Suhu Hubung Kerja | — | -55C to +150C |
| Configuration | — | Single |
| Gate Charge | — | [DATA_NEEDED: Qg] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Jumlah Pin | — | 8 |