FDD8896 vs FDD8880 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng FDD8896 sa pamamagitan ng onsemi at FDD8880 sa pamamagitan ng onsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

onsemi
FDD8880 FDD8880 - 30V 58A N-Ch PowerTrench MOSFET | onsemi

FDD8880 - 30V 58A N-Ch PowerTrench MOSFET | onsemi

FDD8880 ⚠ Huling Pagbili

Pagsanggunian na paghahambing

Parametro FDD8896 FDD8880
Brand onsemi onsemi
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Tapus ng Buhay Huling Pagbili
Uri ng Transistor N-Channel PowerTrench MOSFET —
Drain-Source Voltage (Vdss) 30 V —
Continuous Drain Current (Id) at Ta 17 A —
Continuous Drain Current (Id) at Tc 94 A —
Drain-Source On-Resistance (rDS(ON)) 5.7 mOhm —
Power Dissipation (Pd) at Tc 80 W —
Gate Charge (Qg) [DATA_NEEDED: Gate Charge] [DATA_NEEDED: gate charge]
Gate-Source Voltage (Vgs) Max [DATA_NEEDED: Vgs Max] —
Technology PowerTrench (trench MOSFET) PowerTrench
Uri ng Pagpapasok Surface Mount Surface Mount
Packhaging TO-252 (DPAK), 3-Pin (2+Tab) TO-252AA (DPAK)
Bilang ng Pin 3 —
Configuration Single FET Single FET
Typical Application DC/DC converters, synchronous PWM controllers —
Manufacturer Fairchild Semiconductor (now onsemi) —
Packing Tape & Reel (T/R) —
Polarity — N-Channel
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) — 13 A (Ta), 58 A (Tc)
On-Resistance (rDS(on)) — 9 mOhm max
Total Power Dissipation (PD) — 55 W (Tc)
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max]
Threshold Voltage (VGS th) — [DATA_NEEDED: threshold voltage]
Hanay ng Temperature na Operasyon — [DATA_NEEDED: operating temperature range]
Thermal Resistance (RthJA) — [DATA_NEEDED: thermal resistance]
Tindminan RoHS — [DATA_NEEDED: RoHS status]
Katayuan ng Lifecycle — Last Shipments

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