H5AN8G6NCJR-VKC vs K4A8G165WB-BCRC Comparison
Detailed side-by-side comparison of H5AN8G6NCJR-VKC by SK hynix and K4A8G165WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WB-BCRC ✓ ActiveSpecification Comparison
| Parameter | H5AN8G6NCJR-VKC | K4A8G165WB-BCRC |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Memory Size | 8 Gbit | 8 Gb |
| Memory Organization | 512M x 16 | 512M x 16 |
| Data Rate | 2666 Mbps (MT/s) | 2400 Mbps/pin (DDR4-2400) |
| Clock Frequency | 1.333 GHz | 1200 MHz (DDR4-2400) |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | 1.2 V |
| Interface | Parallel | Parallel (DDR4 SDRAM bus) |
| Operating Temperature | 0C to +95C | -40C to +95C |
| Package | FBGA-96 | 96-ball FBGA (PBGA96) |
| Mounting Type | Surface Mount | Surface Mount |
| Standby Current | 28 mA | — |
| Operating Current | 45 mA | — |
| Features | Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration | — |
| Lead-Free / Halogen-Free | Yes (per datasheet description) | — |
| RoHS Status | Compliant | — |
| Lifecycle Status | Active | — |
| Technology | — | CMOS, B-die 8Gb die |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC / CA Parity | — | CRC function supported |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |