H5AN8G6NCJR-VKC vs K4A8G165WB-BCRC Comparison

Detailed side-by-side comparison of H5AN8G6NCJR-VKC by SK hynix and K4A8G165WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5AN8G6NCJR-VKC

H5AN8G6NCJR-VKC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix

H5AN8G6NCJR-VKC βœ“ Active
Samsung Electronics
K4A8G165WB-BCRC K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung

K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung

K4A8G165WB-BCRC βœ“ Active

Specification Comparison

Parameter H5AN8G6NCJR-VKC K4A8G165WB-BCRC
Brand SK hynix Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $60.00 $12.57
Memory Type DDR4 SDRAM DDR4 SDRAM (DRAM, volatile)
Density 8 Gb β€”
Organization 512M x 16 β€”
Data Rate 2666 Mbps 2400 Mbps (PC4-19200)
Supply Voltage (VDD) 1.2 V (1.14V to 1.26V) β€”
Operating Temperature 0Β°C to +95Β°C -40C to +95C
Package FBGA-96 96-ball FBGA (PBGA96)
Operating Current (IDD2N) 28 mA β€”
Operating Current (IDD4R) 45 mA β€”
Burst Length 8 (BC4) β€”
CAS Latency [DATA_NEEDED: CAS Latency] β€”
Row Address Bits [DATA_NEEDED: Row Address Bits] β€”
Column Address Bits [DATA_NEEDED: Column Address Bits] β€”
Lead-Free Yes β€”
Halogen-Free Yes β€”
RoHS Compliant β€”
Memory Size β€” 8 Gb (1 GB)
Memory Organization β€” 512M x 16
Supply Voltage β€” 1.2 V (1.14 V to 1.26 V)
Technology β€” CMOS DRAM, Samsung 8Gb B-die
Ball Pitch β€” 0.8 mm
Mounting Type β€” Surface Mount
Interface β€” DDR4 (Double Data Rate, synchronous)
On-Die Termination β€” Yes (ODT with dynamic ODT)
ZQ Calibration β€” Yes
CRC / CA Parity β€” Yes (CRC function)
Auto Precharge β€” Yes
Asynchronous Reset β€” Yes
Refresh β€” Auto-refresh and self-refresh
RoHS Status β€” Compliant

Datasheets & Resources

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