H5AN8G6NCJR-VKC vs K4A8G165WB-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G6NCJR-VKC sa pamamagitan ng SK hynix at K4A8G165WB-BCRC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WB-BCRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | H5AN8G6NCJR-VKC | K4A8G165WB-BCRC |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Kategorya | DRAM | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Laki ng Memory | 8 Gbit | 8 Gb |
| Memory Organization | 512M x 16 | 512M x 16 |
| Rate ng Data | 2666 Mbps (MT/s) | 2400 Mbps/pin (DDR4-2400) |
| Clock Frequency | 1.333 GHz | 1200 MHz (DDR4-2400) |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | 1.2 V |
| Interface | Parallel | Parallel (DDR4 SDRAM bus) |
| Temperature na Operasyon | 0C to +95C | -40C to +95C |
| Packhaging | FBGA-96 | 96-ball FBGA (PBGA96) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Standby Current | 28 mA | — |
| Operating Current | 45 mA | — |
| Mga Karakteristika | Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration | — |
| Lead-Free / Halogen-Free | Yes (per datasheet description) | — |
| Tindminan RoHS | Compliant | — |
| Katayuan ng Lifecycle | Active | — |
| Technology | — | CMOS, B-die 8Gb die |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC / CA Parity | — | CRC function supported |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |