H5AN8G6NCJR-VKC vs K4A8G165WB-BCRC Perbandingan
Perbandingan bersamaan detil H5AN8G6NCJR-VKC dari SK hynix dan K4A8G165WB-BCRC dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN8G6NCJR-VKC | K4A8G165WB-BCRC |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Ukuran Memori | 8 Gbit | 8 Gb |
| Memory Organization | 512M x 16 | 512M x 16 |
| Laju Data | 2666 Mbps (MT/s) | 2400 Mbps/pin (DDR4-2400) |
| Clock Frequency | 1.333 GHz | 1200 MHz (DDR4-2400) |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | 1.2 V |
| Antarmuka | Parallel | Parallel (DDR4 SDRAM bus) |
| Suhu Kerja | 0C to +95C | -40C to +95C |
| Paket | FBGA-96 | 96-ball FBGA (PBGA96) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Standby Current | 28 mA | — |
| Operating Current | 45 mA | — |
| Fitur | Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration | — |
| Lead-Free / Halogen-Free | Yes (per datasheet description) | — |
| Status RoHS | Compliant | — |
| Status Lingkungan Hidup | Active | — |
| Technology | — | CMOS, B-die 8Gb die |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC / CA Parity | — | CRC function supported |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |