H5AN8G6NCJR-VKC vs K4A8G165WB-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NCJR-VKC disebabkan oleh SK hynix dan K4A8G165WB-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G6NCJR-VKC | K4A8G165WB-BCRC |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Saiz Ingatan | 8 Gbit | 8 Gb |
| Memory Organization | 512M x 16 | 512M x 16 |
| Kadar Data | 2666 Mbps (MT/s) | 2400 Mbps/pin (DDR4-2400) |
| Clock Frequency | 1.333 GHz | 1200 MHz (DDR4-2400) |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | 1.2 V |
| Antaramuka | Parallel | Parallel (DDR4 SDRAM bus) |
| Suhu Operasi | 0C to +95C | -40C to +95C |
| Kemasan | FBGA-96 | 96-ball FBGA (PBGA96) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Standby Current | 28 mA | — |
| Operating Current | 45 mA | — |
| Ciri-ciri | Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration | — |
| Lead-Free / Halogen-Free | Yes (per datasheet description) | — |
| Status RoHS | Compliant | — |
| Status Lingkungan Hidup | Active | — |
| Technology | — | CMOS, B-die 8Gb die |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC / CA Parity | — | CRC function supported |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |