H5ANAG8NCMR-VKC vs K4AAG165WM-BCRC Comparison
Detailed side-by-side comparison of H5ANAG8NCMR-VKC by SK hynix and K4AAG165WM-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4AAG165WM-BCRC - 16Gb DDR4 x16 SDRAM 3200Mbps | Samsung
K4AAG165WM-BCRC ✓ ActiveSpecification Comparison
| Parameter | H5ANAG8NCMR-VKC | K4AAG165WM-BCRC |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 16 Gb | — |
| Memory Organization | 2G x 8 | — |
| Data Rate | 2666 Mbps/pin (DDR4-2666) | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Package | FBGA-78 | 96-ball FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Speed Grade | VK (per SK hynix speed-bin suffix) | — |
| Power Class | Normal Power | — |
| Bank Groups | 4 | — |
| Banks Total | 16 | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range for K4AAG165WM-BCRC] |
| CAS Latency | [DATA_NEEDED: CAS latency for VK speed bin] | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| Packaging | [DATA_NEEDED: standard packing quantity] | — |
| Manufacturer Process | CMOS DRAM | — |
| Density | — | 16 Gb |
| Organization | — | 1G x 16 |
| Interface | — | DDR4 (SSTL-12) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| Data Mask Function | — | Yes |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency at 3200 Mbps] |