H5ANAG8NCMR-VKC vs K4AAG165WM-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5ANAG8NCMR-VKC sa pamamagitan ng SK hynix at K4AAG165WM-BCRC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4AAG165WM-BCRC - 16Gb DDR4 x16 SDRAM 3200Mbps | Samsung
K4AAG165WM-BCRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | H5ANAG8NCMR-VKC | K4AAG165WM-BCRC |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 16 Gb | — |
| Memory Organization | 2G x 8 | — |
| Rate ng Data | 2666 Mbps/pin (DDR4-2666) | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Packhaging | FBGA-78 | 96-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Speed Grade | VK (per SK hynix speed-bin suffix) | — |
| Power Class | Normal Power | — |
| Bank Groups | 4 | — |
| Banks Total | 16 | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range for K4AAG165WM-BCRC] |
| Latensya ng CAS | [DATA_NEEDED: CAS latency for VK speed bin] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Packaging | [DATA_NEEDED: standard packing quantity] | — |
| Manufacturer Process | CMOS DRAM | — |
| Density | — | 16 Gb |
| Organisasyon | — | 1G x 16 |
| Interface | — | DDR4 (SSTL-12) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| Data Mask Function | — | Yes |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency at 3200 Mbps] |