H5ANAG8NCMR-VKC vs K4AAG165WM-BCRC 对比
详细并排对比 H5ANAG8NCMR-VKC 出自 SK hynix 和 K4AAG165WM-BCRC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG8NCMR-VKC | K4AAG165WM-BCRC |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 16 Gb | — |
| Memory Organization | 2G x 8 | — |
| 数据速率 | 2666 Mbps/pin (DDR4-2666) | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V | — |
| 封装 | FBGA-78 | 96-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| Speed Grade | VK (per SK hynix speed-bin suffix) | — |
| Power Class | Normal Power | — |
| Bank Groups | 4 | — |
| Banks Total | 16 | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range for K4AAG165WM-BCRC] |
| CAS 延迟 | [DATA_NEEDED: CAS latency for VK speed bin] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| Packaging | [DATA_NEEDED: standard packing quantity] | — |
| Manufacturer Process | CMOS DRAM | — |
| Density | — | 16 Gb |
| 存储组织 | — | 1G x 16 |
| 接口 | — | DDR4 (SSTL-12) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| Data Mask Function | — | Yes |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency at 3200 Mbps] |