H5ANAG8NCMR-VKC vs K4AAG165WM-BCRC Perbandingan
Perbandingan bersamaan detil H5ANAG8NCMR-VKC dari SK hynix dan K4AAG165WM-BCRC dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4AAG165WM-BCRC - 16Gb DDR4 x16 SDRAM 3200Mbps | Samsung
K4AAG165WM-BCRC ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | H5ANAG8NCMR-VKC | K4AAG165WM-BCRC |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 16 Gb | — |
| Memory Organization | 2G x 8 | — |
| Laju Data | 2666 Mbps/pin (DDR4-2666) | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Paket | FBGA-78 | 96-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Speed Grade | VK (per SK hynix speed-bin suffix) | — |
| Power Class | Normal Power | — |
| Bank Groups | 4 | — |
| Banks Total | 16 | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range for K4AAG165WM-BCRC] |
| Latensi CAS | [DATA_NEEDED: CAS latency for VK speed bin] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Packaging | [DATA_NEEDED: standard packing quantity] | — |
| Manufacturer Process | CMOS DRAM | — |
| Density | — | 16 Gb |
| Organisasi | — | 1G x 16 |
| Antarmuka | — | DDR4 (SSTL-12) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| Data Mask Function | — | Yes |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency at 3200 Mbps] |