H5TC4G63AFR-PBI vs H5TC4G63MFR-PBA Comparison

Detailed side-by-side comparison of H5TC4G63AFR-PBI by SK hynix and H5TC4G63MFR-PBA by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5TC4G63AFR-PBI

H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBI Obsolete
SK hynix
H5TC4G63MFR-PBA

H5TC4G63MFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63MFR-PBA βœ“ Active

Specification Comparison

Parameter H5TC4G63AFR-PBI H5TC4G63MFR-PBA
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Obsolete Active
Stock Status In Stock In Stock
Unit Price (USD) $6.50 $6.50
Memory Type DDR3L SDRAM DDR3L SDRAM
Organization 256M x 16 256M x 16
Total Memory Size 4 Gb β€”
Data Rate DDR3-1600 (PC3L-12800) 1866 Mbps (PC3L-14900)
Supply Voltage 1.35 V β€”
Number of Banks 8 8
Burst Length 8 (BL8) BL8, BL4 (with burst chop)
CAS Latency Programmable β€”
On-Die Termination (ODT) Yes Yes
Refresh Period 7.8 us at 85Β°C β€”
Operating Temperature Range -40Β°C to +95Β°C β€”
Package 96-ball FBGA (TFBGA, BGA96, 9x16, 32) 96-ball FBGA
Mounting Type Surface Mount β€”
Number of Terminals 96 β€”
RoHS Status Compliant β€”
Density β€” 4 Gb
Supply Voltage (VDD/VDDQ) β€” 1.35V (+0.100V/-0.067V)
CAS Latency (CL) β€” Programmable
CAS Write Latency (CWL) β€” Programmable
Additive Latency β€” Programmable
ZQ Calibration β€” Yes
Write Leveling β€” Yes
Auto Self-Refresh β€” Yes
Temperature-Compensated Self-Refresh β€” Yes
Process Technology β€” 30nm-class
RoHS Compliant β€” Yes (Lead-Free & Halogen-Free)

Datasheets & Resources

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