H5TC4G63AFR-PBI vs H5TC4G63MFR-PBA Comparison
Detailed side-by-side comparison of H5TC4G63AFR-PBI by SK hynix and H5TC4G63MFR-PBA by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5TC4G63AFR-PBI | H5TC4G63MFR-PBA |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Obsolete | Active |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Organization | 256M x 16 | 256M x 16 |
| Total Memory Size | 4 Gb | — |
| Data Rate | DDR3-1600 (PC3L-12800) | 1866 Mbps (PC3L-14900) |
| Supply Voltage | 1.35 V | — |
| Number of Banks | 8 | 8 |
| Burst Length | 8 (BL8) | BL8, BL4 (with burst chop) |
| CAS Latency | Programmable | — |
| On-Die Termination (ODT) | Yes | Yes |
| Refresh Period | 7.8 us at 85°C | — |
| Operating Temperature Range | -40°C to +95°C | — |
| Package | 96-ball FBGA (TFBGA, BGA96, 9x16, 32) | 96-ball FBGA |
| Mounting Type | Surface Mount | — |
| Number of Terminals | 96 | — |
| RoHS Status | Compliant | — |
| Density | — | 4 Gb |
| Supply Voltage (VDD/VDDQ) | — | 1.35V (+0.100V/-0.067V) |
| CAS Latency (CL) | — | Programmable |
| CAS Write Latency (CWL) | — | Programmable |
| Additive Latency | — | Programmable |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Temperature-Compensated Self-Refresh | — | Yes |
| Process Technology | — | 30nm-class |
| RoHS Compliant | — | Yes (Lead-Free & Halogen-Free) |