H5TC4G63AFR-PBI vs H5TC4G63MFR-PBA Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5TC4G63AFR-PBI sa pamamagitan ng SK hynix at H5TC4G63MFR-PBA sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5TC4G63AFR-PBI | H5TC4G63MFR-PBA |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Obsolete | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Organisasyon | 256M x 16 | 256M x 16 |
| Total Memory Size | 4 Gb | — |
| Rate ng Data | DDR3-1600 (PC3L-12800) | 1866 Mbps (PC3L-14900) |
| Volte ng Pagbibigay | 1.35 V | — |
| Number of Banks | 8 | 8 |
| Burst Length | 8 (BL8) | BL8, BL4 (with burst chop) |
| Latensya ng CAS | Programmable | — |
| On-Die Termination (ODT) | Yes | Yes |
| Refresh Period | 7.8 us at 85°C | — |
| Hanay ng Temperature na Operasyon | -40°C to +95°C | — |
| Packhaging | 96-ball FBGA (TFBGA, BGA96, 9x16, 32) | 96-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | — |
| Number of Terminals | 96 | — |
| Tindminan RoHS | Compliant | — |
| Density | — | 4 Gb |
| Supply Voltage (VDD/VDDQ) | — | 1.35V (+0.100V/-0.067V) |
| CAS Latency (CL) | — | Programmable |
| CAS Write Latency (CWL) | — | Programmable |
| Additive Latency | — | Programmable |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Temperature-Compensated Self-Refresh | — | Yes |
| Process Technology | — | 30nm-class |
| RoHS Compliant | — | Yes (Lead-Free & Halogen-Free) |