H5TC4G63AFR-PBI vs H5TC4G63MFR-PBA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5TC4G63AFR-PBI disebabkan oleh SK hynix dan H5TC4G63MFR-PBA disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5TC4G63AFR-PBI | H5TC4G63MFR-PBA |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Obsolete | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Organisasi | 256M x 16 | 256M x 16 |
| Total Memory Size | 4 Gb | — |
| Kadar Data | DDR3-1600 (PC3L-12800) | 1866 Mbps (PC3L-14900) |
| Tegangan Pemberi Arus | 1.35 V | — |
| Number of Banks | 8 | 8 |
| Burst Length | 8 (BL8) | BL8, BL4 (with burst chop) |
| Latensi CAS | Programmable | — |
| On-Die Termination (ODT) | Yes | Yes |
| Refresh Period | 7.8 us at 85°C | — |
| Gambaran Suhu Operasi | -40°C to +95°C | — |
| Kemasan | 96-ball FBGA (TFBGA, BGA96, 9x16, 32) | 96-ball FBGA |
| Jenis Pemasangan | Surface Mount | — |
| Number of Terminals | 96 | — |
| Status RoHS | Compliant | — |
| Density | — | 4 Gb |
| Supply Voltage (VDD/VDDQ) | — | 1.35V (+0.100V/-0.067V) |
| CAS Latency (CL) | — | Programmable |
| CAS Write Latency (CWL) | — | Programmable |
| Additive Latency | — | Programmable |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Temperature-Compensated Self-Refresh | — | Yes |
| Process Technology | — | 30nm-class |
| RoHS Compliant | — | Yes (Lead-Free & Halogen-Free) |