H5TC4G63AFR-PBI vs H5TC4G63MFR-PBA 比較
詳細並排比較 H5TC4G63AFR-PBI 由 SK hynix 與 H5TC4G63MFR-PBA 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5TC4G63AFR-PBI | H5TC4G63MFR-PBA |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | Obsolete | 啟用中 |
| 記憶體類型 | DDR3L SDRAM | DDR3L SDRAM |
| 組織 | 256M x 16 | 256M x 16 |
| Total Memory Size | 4 Gb | — |
| 資料速率 | DDR3-1600 (PC3L-12800) | 1866 Mbps (PC3L-14900) |
| 供應電壓 | 1.35 V | — |
| Number of Banks | 8 | 8 |
| Burst Length | 8 (BL8) | BL8, BL4 (with burst chop) |
| CAS 延遲 | Programmable | — |
| On-Die Termination (ODT) | Yes | Yes |
| Refresh Period | 7.8 us at 85°C | — |
| 工作溫度範圍 | -40°C to +95°C | — |
| 封裝 | 96-ball FBGA (TFBGA, BGA96, 9x16, 32) | 96-ball FBGA |
| 安裝類型 | Surface Mount | — |
| Number of Terminals | 96 | — |
| RoHS 狀態 | Compliant | — |
| Density | — | 4 Gb |
| Supply Voltage (VDD/VDDQ) | — | 1.35V (+0.100V/-0.067V) |
| CAS Latency (CL) | — | Programmable |
| CAS Write Latency (CWL) | — | Programmable |
| Additive Latency | — | Programmable |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Temperature-Compensated Self-Refresh | — | Yes |
| Process Technology | — | 30nm-class |
| RoHS Compliant | — | Yes (Lead-Free & Halogen-Free) |