IAUA210N10S5N024AUMA1 vs IPB60R280P7ATMA1 Comparison

Detailed side-by-side comparison of IAUA210N10S5N024AUMA1 by Infineon and IPB60R280P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUA210N10S5N024AUMA1 IPB60R280P7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Unit Price (USD) — $0.88
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 CoolMOS P7 (600 V)
Technology MOSFET (Metal Oxide), N-Channel Superjunction (SJ)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) @ Tj 210 A —
Continuous Drain Current (ID) @ TC=25°C [DATA_NEEDED: ID at TC=25°C] —
On-Resistance RDS(on) Max @ VGS=10V 2.4 mΩ —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th) value] —
Gate Charge Qg (typ) [DATA_NEEDED: Qg typ @ VGS=10V] —
Power Dissipation (PD) @ TC=25°C 238 W —
Operating Temperature Range -55°C to +175°C (TJ) -55 °C to +150 °C (T_j max)
Package PG-HSOF-5-4 (7×8 mm² sTOLL) PG-TO263-3 (D2PAK)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
RoHS Status Compliant Compliant
Lead-Free Yes Yes
MSL Level [DATA_NEEDED: MSL rating] —
Avalanche Energy Rated Yes (per datasheet) —
Transistor Type — N-Channel MOSFET
Drain-Source Voltage (V_DSS) — 600 V
Continuous Drain Current (I_D, T_C=25°C) — 12 A
On-Resistance R_DS(on) max (V_GS=10V) — 280 mOhm
Gate-Source Threshold V_GS(th) typ — 3.5 V
Power Dissipation P_D (T_C=25°C) — 53 W
Pin Count — 3 (2 + Tab)
Configuration — Single N-Channel
Generation — 7th Gen CoolMOS (successor to P6)

Datasheets & Resources

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