IAUA210N10S5N024AUMA1 vs IPB60R280P7ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUA210N10S5N024AUMA1 sa pamamagitan ng Infineon at IPB60R280P7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUA210N10S5N024AUMA1 IAUA210N10S5N024AUMA1 - 100V 2.4mΩ 210A OptiMOS 5 MOSFET | Infineon

IAUA210N10S5N024AUMA1 - 100V 2.4mΩ 210A OptiMOS 5 MOSFET | Infineon

IAUA210N10S5N024AUMA1 ✓ Nakahanda
Infineon
IPB60R280P7ATMA1 IPB60R280P7ATMA1 - 600V 280mOhm CoolMOS P7 MOSFET | Infineon

IPB60R280P7ATMA1 - 600V 280mOhm CoolMOS P7 MOSFET | Infineon

IPB60R280P7ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUA210N10S5N024AUMA1 IPB60R280P7ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Presyo ng Yunit (USD) — $0.88
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 CoolMOS P7 (600 V)
Technology MOSFET (Metal Oxide), N-Channel Superjunction (SJ)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) @ Tj 210 A —
Continuous Drain Current (ID) @ TC=25°C [DATA_NEEDED: ID at TC=25°C] —
On-Resistance RDS(on) Max @ VGS=10V 2.4 mΩ —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th) value] —
Gate Charge Qg (typ) [DATA_NEEDED: Qg typ @ VGS=10V] —
Power Dissipation (PD) @ TC=25°C 238 W —
Hanay ng Temperature na Operasyon -55°C to +175°C (TJ) -55 °C to +150 °C (T_j max)
Packhaging PG-HSOF-5-4 (7×8 mm² sTOLL) PG-TO263-3 (D2PAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes
Level ng MSL [DATA_NEEDED: MSL rating] —
Avalanche Energy Rated Yes (per datasheet) —
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (V_DSS) — 600 V
Continuous Drain Current (I_D, T_C=25°C) — 12 A
On-Resistance R_DS(on) max (V_GS=10V) — 280 mOhm
Gate-Source Threshold V_GS(th) typ — 3.5 V
Power Dissipation P_D (T_C=25°C) — 53 W
Bilang ng Pin — 3 (2 + Tab)
Configuration — Single N-Channel
Generation — 7th Gen CoolMOS (successor to P6)

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