IAUA210N10S5N024AUMA1 vs IPB60R280P7ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUA210N10S5N024AUMA1 sa pamamagitan ng Infineon at IPB60R280P7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUA210N10S5N024AUMA1 - 100V 2.4mΩ 210A OptiMOS 5 MOSFET | Infineon
IAUA210N10S5N024AUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUA210N10S5N024AUMA1 | IPB60R280P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $0.88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | CoolMOS P7 (600 V) |
| Technology | MOSFET (Metal Oxide), N-Channel | Superjunction (SJ) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ Tj | 210 A | — |
| Continuous Drain Current (ID) @ TC=25°C | [DATA_NEEDED: ID at TC=25°C] | — |
| On-Resistance RDS(on) Max @ VGS=10V | 2.4 mΩ | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th) value] | — |
| Gate Charge Qg (typ) | [DATA_NEEDED: Qg typ @ VGS=10V] | — |
| Power Dissipation (PD) @ TC=25°C | 238 W | — |
| Hanay ng Temperature na Operasyon | -55°C to +175°C (TJ) | -55 °C to +150 °C (T_j max) |
| Packhaging | PG-HSOF-5-4 (7×8 mm² sTOLL) | PG-TO263-3 (D2PAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Avalanche Energy Rated | Yes (per datasheet) | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | — | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | — | 3.5 V |
| Power Dissipation P_D (T_C=25°C) | — | 53 W |
| Bilang ng Pin | — | 3 (2 + Tab) |
| Configuration | — | Single N-Channel |
| Generation | — | 7th Gen CoolMOS (successor to P6) |