IAUA210N10S5N024AUMA1 vs IPB60R280P7ATMA1 Perbandingan

Perbandingan bersamaan detil IAUA210N10S5N024AUMA1 dari Infineon dan IPB60R280P7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUA210N10S5N024AUMA1 IPB60R280P7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) — $0,88
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 CoolMOS P7 (600 V)
Technology MOSFET (Metal Oxide), N-Channel Superjunction (SJ)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) @ Tj 210 A —
Continuous Drain Current (ID) @ TC=25°C [DATA_NEEDED: ID at TC=25°C] —
On-Resistance RDS(on) Max @ VGS=10V 2.4 mΩ —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th) value] —
Gate Charge Qg (typ) [DATA_NEEDED: Qg typ @ VGS=10V] —
Power Dissipation (PD) @ TC=25°C 238 W —
Rentang Suhu Kerja -55°C to +175°C (TJ) -55 °C to +150 °C (T_j max)
Paket PG-HSOF-5-4 (7×8 mm² sTOLL) PG-TO263-3 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Level MSL [DATA_NEEDED: MSL rating] —
Avalanche Energy Rated Yes (per datasheet) —
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (V_DSS) — 600 V
Continuous Drain Current (I_D, T_C=25°C) — 12 A
On-Resistance R_DS(on) max (V_GS=10V) — 280 mOhm
Gate-Source Threshold V_GS(th) typ — 3.5 V
Power Dissipation P_D (T_C=25°C) — 53 W
Jumlah Pin — 3 (2 + Tab)
Configuration — Single N-Channel
Generation — 7th Gen CoolMOS (successor to P6)

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