IAUA210N10S5N024AUMA1 vs IPB60R280P7ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUA210N10S5N024AUMA1 disebabkan oleh Infineon dan IPB60R280P7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUA210N10S5N024AUMA1 IPB60R280P7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) — $0.88
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 CoolMOS P7 (600 V)
Technology MOSFET (Metal Oxide), N-Channel Superjunction (SJ)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) @ Tj 210 A —
Continuous Drain Current (ID) @ TC=25°C [DATA_NEEDED: ID at TC=25°C] —
On-Resistance RDS(on) Max @ VGS=10V 2.4 mΩ —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th) value] —
Gate Charge Qg (typ) [DATA_NEEDED: Qg typ @ VGS=10V] —
Power Dissipation (PD) @ TC=25°C 238 W —
Gambaran Suhu Operasi -55°C to +175°C (TJ) -55 °C to +150 °C (T_j max)
Kemasan PG-HSOF-5-4 (7×8 mm² sTOLL) PG-TO263-3 (D2PAK)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Aras MSL [DATA_NEEDED: MSL rating] —
Avalanche Energy Rated Yes (per datasheet) —
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (V_DSS) — 600 V
Continuous Drain Current (I_D, T_C=25°C) — 12 A
On-Resistance R_DS(on) max (V_GS=10V) — 280 mOhm
Gate-Source Threshold V_GS(th) typ — 3.5 V
Power Dissipation P_D (T_C=25°C) — 53 W
Kiraan Pin — 3 (2 + Tab)
Configuration — Single N-Channel
Generation — 7th Gen CoolMOS (successor to P6)

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