IAUA210N10S5N024AUMA1 vs IPB60R280P7ATMA1 比較
詳細並排比較 IAUA210N10S5N024AUMA1 由 Infineon 與 IPB60R280P7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IAUA210N10S5N024AUMA1 - 100V 2.4mΩ 210A OptiMOS 5 MOSFET | Infineon
IAUA210N10S5N024AUMA1 ✓ 啟用中
規格比較
| 參數 | IAUA210N10S5N024AUMA1 | IPB60R280P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $0.88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | CoolMOS P7 (600 V) |
| Technology | MOSFET (Metal Oxide), N-Channel | Superjunction (SJ) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ Tj | 210 A | — |
| Continuous Drain Current (ID) @ TC=25°C | [DATA_NEEDED: ID at TC=25°C] | — |
| On-Resistance RDS(on) Max @ VGS=10V | 2.4 mΩ | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th) value] | — |
| Gate Charge Qg (typ) | [DATA_NEEDED: Qg typ @ VGS=10V] | — |
| Power Dissipation (PD) @ TC=25°C | 238 W | — |
| 工作溫度範圍 | -55°C to +175°C (TJ) | -55 °C to +150 °C (T_j max) |
| 封裝 | PG-HSOF-5-4 (7×8 mm² sTOLL) | PG-TO263-3 (D2PAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL 等級 | [DATA_NEEDED: MSL rating] | — |
| Avalanche Energy Rated | Yes (per datasheet) | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | — | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | — | 3.5 V |
| Power Dissipation P_D (T_C=25°C) | — | 53 W |
| 腳位數 | — | 3 (2 + Tab) |
| Configuration | — | Single N-Channel |
| Generation | — | 7th Gen CoolMOS (successor to P6) |