IGLR70R270D2SXUMA1 vs IPT022N10NF2SATMA1 Comparison

Detailed side-by-side comparison of IGLR70R270D2SXUMA1 by Infineon and IPT022N10NF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IGLR70R270D2SXUMA1

IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΞ© CoolGaN G5 | Infineon

IGLR70R270D2SXUMA1 βœ“ Active
Infineon
IPT022N10NF2SATMA1

IPT022N10NF2SATMA1 - 100V 2.2mΞ© StrongIRFET 2 N-MOSFET | Infineon

IPT022N10NF2SATMA1 βœ“ Active

Specification Comparison

Parameter IGLR70R270D2SXUMA1 IPT022N10NF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.13 $0.99
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolGaNβ„’ G5 StrongIRFET 2
Technology Gallium Nitride (GaN) HEMT, enhancement-mode Trench MOSFET
Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 700 V β€”
Continuous Drain Current (ID, Tc) 7.3 A β€”
Power Dissipation (PD, Tc) 28 W β€”
On-State Resistance (RDS(on), typ.) 270 mΞ© β€”
Package PG-TSON-8-8 (ThinPAK) PG-HSOF-8-10 (8 leads + tab)
Mounting Type Surface Mount Surface Mount
Gate Drive 0 to 12 V (enhancement-mode, internal gate diode) β€”
Wafer Process 200 mm (8-inch) GaN-on-Si β€”
RoHS Status Compliant Compliant
Operating Temperature Range -40C to +150C (junction) -55C to +175C
Reverse Recovery Charge (Qrr) 0 nC (no body diode) β€”
FET Type β€” N-Channel
Drain-Source Voltage (V(BR)DSS) β€” 100 V
Continuous Drain Current (Id) at Ta β€” 29 A
Continuous Drain Current (Id) at Tc β€” 236 A
Typical RDS(on) at VGS=10V β€” 2.2 mΞ©
Power Dissipation at Ta β€” 3.8 W
Power Dissipation at Tc β€” 250 W
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical value]

Datasheets & Resources

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