IGLR70R270D2SXUMA1 vs IPT022N10NF2SATMA1 比較
詳細並排比較 IGLR70R270D2SXUMA1 由 Infineon 與 IPT022N10NF2SATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΩ CoolGaN G5 | Infineon
IGLR70R270D2SXUMA1 ✓ 啟用中規格比較
| 參數 | IGLR70R270D2SXUMA1 | IPT022N10NF2SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN™ G5 | StrongIRFET 2 |
| Technology | Gallium Nitride (GaN) HEMT, enhancement-mode | Trench MOSFET |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 700 V | — |
| Continuous Drain Current (ID, Tc) | 7.3 A | — |
| Power Dissipation (PD, Tc) | 28 W | — |
| On-State Resistance (RDS(on), typ.) | 270 mΩ | — |
| 封裝 | PG-TSON-8-8 (ThinPAK) | PG-HSOF-8-10 (8 leads + tab) |
| 安裝類型 | Surface Mount | Surface Mount |
| Gate Drive | 0 to 12 V (enhancement-mode, internal gate diode) | — |
| Wafer Process | 200 mm (8-inch) GaN-on-Si | — |
| RoHS 狀態 | Compliant | Compliant |
| 工作溫度範圍 | -40C to +150C (junction) | -55C to +175C |
| Reverse Recovery Charge (Qrr) | 0 nC (no body diode) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 100 V |
| Continuous Drain Current (Id) at Ta | — | 29 A |
| Continuous Drain Current (Id) at Tc | — | 236 A |
| Typical RDS(on) at VGS=10V | — | 2.2 mΩ |
| Power Dissipation at Ta | — | 3.8 W |
| Power Dissipation at Tc | — | 250 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |