IGLR70R270D2SXUMA1 vs IPT022N10NF2SATMA1 Perbandingan
Perbandingan bersamaan detil IGLR70R270D2SXUMA1 dari Infineon dan IPT022N10NF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΩ CoolGaN G5 | Infineon
IGLR70R270D2SXUMA1 ✓ AktifInfineon
IPT022N10NF2SATMA1 - 100V 2.2mΩ StrongIRFET 2 N-MOSFET | Infineon
IPT022N10NF2SATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IGLR70R270D2SXUMA1 | IPT022N10NF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN™ G5 | StrongIRFET 2 |
| Technology | Gallium Nitride (GaN) HEMT, enhancement-mode | Trench MOSFET |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 700 V | — |
| Continuous Drain Current (ID, Tc) | 7.3 A | — |
| Power Dissipation (PD, Tc) | 28 W | — |
| On-State Resistance (RDS(on), typ.) | 270 mΩ | — |
| Paket | PG-TSON-8-8 (ThinPAK) | PG-HSOF-8-10 (8 leads + tab) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Gate Drive | 0 to 12 V (enhancement-mode, internal gate diode) | — |
| Wafer Process | 200 mm (8-inch) GaN-on-Si | — |
| Status RoHS | Compliant | Compliant |
| Rentang Suhu Kerja | -40C to +150C (junction) | -55C to +175C |
| Reverse Recovery Charge (Qrr) | 0 nC (no body diode) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 100 V |
| Continuous Drain Current (Id) at Ta | — | 29 A |
| Continuous Drain Current (Id) at Tc | — | 236 A |
| Typical RDS(on) at VGS=10V | — | 2.2 mΩ |
| Power Dissipation at Ta | — | 3.8 W |
| Power Dissipation at Tc | — | 250 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |