IGLR70R270D2SXUMA1 vs IPT022N10NF2SATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IGLR70R270D2SXUMA1 sa pamamagitan ng Infineon at IPT022N10NF2SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPT022N10NF2SATMA1 IPT022N10NF2SATMA1 - 100V 2.2mΩ StrongIRFET 2 N-MOSFET | Infineon

IPT022N10NF2SATMA1 - 100V 2.2mΩ StrongIRFET 2 N-MOSFET | Infineon

IPT022N10NF2SATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IGLR70R270D2SXUMA1 IPT022N10NF2SATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolGaN™ G5 StrongIRFET 2
Technology Gallium Nitride (GaN) HEMT, enhancement-mode Trench MOSFET
Channel Type N-Channel —
Drain-Source Voltage (VDS) 700 V —
Continuous Drain Current (ID, Tc) 7.3 A —
Power Dissipation (PD, Tc) 28 W —
On-State Resistance (RDS(on), typ.) 270 mΩ —
Packhaging PG-TSON-8-8 (ThinPAK) PG-HSOF-8-10 (8 leads + tab)
Uri ng Pagpapasok Surface Mount Surface Mount
Gate Drive 0 to 12 V (enhancement-mode, internal gate diode) —
Wafer Process 200 mm (8-inch) GaN-on-Si —
Tindminan RoHS Compliant Compliant
Hanay ng Temperature na Operasyon -40C to +150C (junction) -55C to +175C
Reverse Recovery Charge (Qrr) 0 nC (no body diode) —
FET Type — N-Channel
Drain-Source Voltage (V(BR)DSS) — 100 V
Continuous Drain Current (Id) at Ta — 29 A
Continuous Drain Current (Id) at Tc — 236 A
Typical RDS(on) at VGS=10V — 2.2 mΩ
Power Dissipation at Ta — 3.8 W
Power Dissipation at Tc — 250 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical value]

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