IPB100N12S305ATMA2 vs IRFB3207ZPBF 比較
詳細並排比較 IPB100N12S305ATMA2 由 Infineon 與 IRFB3207ZPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPB100N12S305ATMA2 | IRFB3207ZPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Series | OptiMOS 5 120V | HEXFET |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 120 V | 75 V |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Power Dissipation (PD) at Tc | 300 W | — |
| Drain-Source On-Resistance RDS(on) | 0.0048 ohm (4.8 mΩ) at VGS=10 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Maximum Junction Temperature | 175 °C | — |
| Avalanche Energy (EAS) | 1445 mJ | — |
| 封裝 / 外殼 | PG-TO263-3-2 (D2PAK) | — |
| 安裝類型 | Surface Mount | Through Hole |
| 工作溫度範圍 | -55 °C to +175 °C (TJ) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS 狀態 | Compliant | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | N/A (through-hole) |
| Part Number | — | IRFB3207ZPBF |
| Technology | — | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| 工作接面溫度 | — | -55 C to +175 C |
| 封裝 | — | TO-220AB (3-lead through-hole) |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |