IPB100N12S305ATMA2 vs IRFB3207ZPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB100N12S305ATMA2 sa pamamagitan ng Infineon at IRFB3207ZPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB100N12S305ATMA2 - 120V 100A N-Ch MOSFET | Infineon OptiMOS 5
IPB100N12S305ATMA2 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPB100N12S305ATMA2 | IRFB3207ZPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Series | OptiMOS 5 120V | HEXFET |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 120 V | 75 V |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Power Dissipation (PD) at Tc | 300 W | — |
| Drain-Source On-Resistance RDS(on) | 0.0048 ohm (4.8 mΩ) at VGS=10 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Maximum Junction Temperature | 175 °C | — |
| Avalanche Energy (EAS) | 1445 mJ | — |
| Packhaging / Kaso | PG-TO263-3-2 (D2PAK) | — |
| Uri ng Pagpapasok | Surface Mount | Through Hole |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C (TJ) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Tindminan RoHS | Compliant | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | N/A (through-hole) |
| Part Number | — | IRFB3207ZPBF |
| Technology | — | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| Packhaging | — | TO-220AB (3-lead through-hole) |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |