IPB100N12S305ATMA2 vs IRFB3207ZPBF Perbandingan

Perbandingan bersamaan detil IPB100N12S305ATMA2 dari Infineon dan IRFB3207ZPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB100N12S305ATMA2 IRFB3207ZPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Series OptiMOS 5 120V HEXFET
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 120 V 75 V
Continuous Drain Current (ID) at Tc 100 A —
Power Dissipation (PD) at Tc 300 W —
Drain-Source On-Resistance RDS(on) 0.0048 ohm (4.8 mΩ) at VGS=10 V —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Maximum Junction Temperature 175 °C —
Avalanche Energy (EAS) 1445 mJ —
Paket / Case PG-TO263-3-2 (D2PAK) —
Tipe Mounting Surface Mount Through Hole
Rentang Suhu Kerja -55 °C to +175 °C (TJ) —
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant —
Level MSL [DATA_NEEDED: MSL rating] N/A (through-hole)
Part Number — IRFB3207ZPBF
Technology — N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
Suhu Hubung Kerja — -55 C to +175 C
Paket — TO-220AB (3-lead through-hole)
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
Avalanche Rated — Yes (improved Z-variant ruggedness)

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