IPB100N12S305ATMA2 vs IRFB3207ZPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB100N12S305ATMA2 disebabkan oleh Infineon dan IRFB3207ZPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB100N12S305ATMA2 IRFB3207ZPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Series OptiMOS 5 120V HEXFET
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 120 V 75 V
Continuous Drain Current (ID) at Tc 100 A —
Power Dissipation (PD) at Tc 300 W —
Drain-Source On-Resistance RDS(on) 0.0048 ohm (4.8 mΩ) at VGS=10 V —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Maximum Junction Temperature 175 °C —
Avalanche Energy (EAS) 1445 mJ —
Kemasan / Case PG-TO263-3-2 (D2PAK) —
Jenis Pemasangan Surface Mount Through Hole
Gambaran Suhu Operasi -55 °C to +175 °C (TJ) —
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant —
Aras MSL [DATA_NEEDED: MSL rating] N/A (through-hole)
Part Number — IRFB3207ZPBF
Technology — N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
Suhu Hubungan Operasi — -55 C to +175 C
Kemasan — TO-220AB (3-lead through-hole)
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
Avalanche Rated — Yes (improved Z-variant ruggedness)

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