IPB60R125C6ATMA1 vs IPB60R040CFD7ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB60R125C6ATMA1 disebabkan oleh Infineon dan IPB60R040CFD7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB60R125C6ATMA1 IPB60R040CFD7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $5.19
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ C6 —
Part Status Active —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) Superjunction (SJ) N-Channel MOSFET
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID) at TC=25°C 30 A —
Continuous Drain Current (ID) at TC=100°C [DATA_NEEDED: ID at TC=100°C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance (RDS(on)) max at VGS=10V 125 mΩ —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Gate Charge (Qg, typical) [DATA_NEEDED: Qg typical value] —
Power Dissipation (PD) at TC=25°C 219 W —
Suhu Hubungan Operasi -55°C to +150°C —
Kemasan / Case PG-TO263-3 (D2PAK, surface mount) —
Jenis Pemasangan Surface Mount Surface Mount
Supplier Device Package PG-TO263-3 —
Status RoHS Compliant Compliant
Lead-Free Status Yes —
Product Family — CoolMOS CFD7
Continuous Drain Current (ID, Tc=25°C) — 50 A
On-Resistance RDS(on) max @ VGS=10V — 40 mΩ
Gate Threshold Voltage VGS(th) typ — 4 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
Pembuangan Kuasa (TC=25°C) — 227 W
Gambaran Suhu Operasi — -55°C to +150°C
Kemasan — PG-TO263-3-2 (D2PAK)
Integrated Body Diode — Yes - ultra-fast CoolMOS CFD7 diode
Aras MSL — 1
Lead-Free — Yes
Target Applications — Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

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