IPD068N10N3GATMA1 vs IAUZ40N10S5N130ATMA1 Comparison

Detailed side-by-side comparison of IPD068N10N3GATMA1 by Infineon and IAUZ40N10S5N130ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUZ40N10S5N130ATMA1 IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ40N10S5N130ATMA1 βœ“ Active

Specification Comparison

Parameter IPD068N10N3GATMA1 IAUZ40N10S5N130ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.52
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPD068N10N3GATMA1 IAUZ40N10S5N130ATMA1
Technology OptiMOS 3 (N-Channel, Enhancement Mode) OptiMOS 5 (super-junction trench)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc 90 A β€”
On-Resistance RDS(on) max 6.8 mOhm β€”
Power Dissipation (PD) at Tc 150 W β€”
Gate Threshold Voltage VGS(th) 2.0 V to 4.0 V (typical) β€”
Package PG-TO252-3 (DPAK, 2 leads + tab) PG-TSDSON-8-33 (S3O8), 3.3 Γ— 3.3 mm
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55 C to +175 C β€”
Channel Type N-Channel β€”
Configuration Single β€”
RoHS Status Compliant β€”
MSL Level 1 β€”
Packing Tape & Reel (T/R) β€”
Qualification Industrial (non-automotive) β€”
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at Tc=25Β°C β€” 40 A
Pulsed Drain Current (IDM) β€” 160 A
RDS(on) max at VGS=10V β€” 13 mΞ©
RDS(on) typical β€” 10 mΞ©
Maximum Power Dissipation (Tc) β€” 68 W
Operating Temperature Range β€” -55Β°C to +175Β°C (TJ)
Automotive Qualification β€” AEC-Q101 qualified
Lead-Free / RoHS β€” ROHS3 Compliant

Datasheets & Resources

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