IPD068N10N3GATMA1 vs IAUZ40N10S5N130ATMA1 Perbandingan
Perbandingan bersamaan detil IPD068N10N3GATMA1 dari Infineon dan IAUZ40N10S5N130ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD068N10N3GATMA1 - 100V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD068N10N3GATMA1 ✓ AktifInfineon
IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N10S5N130ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPD068N10N3GATMA1 | IAUZ40N10S5N130ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD068N10N3GATMA1 | IAUZ40N10S5N130ATMA1 |
| Technology | OptiMOS 3 (N-Channel, Enhancement Mode) | OptiMOS 5 (super-junction trench) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| On-Resistance RDS(on) max | 6.8 mOhm | — |
| Power Dissipation (PD) at Tc | 150 W | — |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V (typical) | — |
| Paket | PG-TO252-3 (DPAK, 2 leads + tab) | PG-TSDSON-8-33 (S3O8), 3.3 × 3.3 mm |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Hubung Kerja | -55 C to +175 C | — |
| Channel Type | N-Channel | — |
| Configuration | Single | — |
| Status RoHS | Compliant | — |
| Level MSL | 1 | — |
| Packing | Tape & Reel (T/R) | — |
| Qualification | Industrial (non-automotive) | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25°C | — | 40 A |
| Pulsed Drain Current (IDM) | — | 160 A |
| RDS(on) max at VGS=10V | — | 13 mΩ |
| RDS(on) typical | — | 10 mΩ |
| Maximum Power Dissipation (Tc) | — | 68 W |
| Rentang Suhu Kerja | — | -55°C to +175°C (TJ) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead-Free / RoHS | — | ROHS3 Compliant |