IPD068N10N3GATMA1 vs IAUZ40N10S5N130ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD068N10N3GATMA1 sa pamamagitan ng Infineon at IAUZ40N10S5N130ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUZ40N10S5N130ATMA1 IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ40N10S5N130ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD068N10N3GATMA1 IAUZ40N10S5N130ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPD068N10N3GATMA1 IAUZ40N10S5N130ATMA1
Technology OptiMOS 3 (N-Channel, Enhancement Mode) OptiMOS 5 (super-junction trench)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc 90 A —
On-Resistance RDS(on) max 6.8 mOhm —
Power Dissipation (PD) at Tc 150 W —
Gate Threshold Voltage VGS(th) 2.0 V to 4.0 V (typical) —
Packhaging PG-TO252-3 (DPAK, 2 leads + tab) PG-TSDSON-8-33 (S3O8), 3.3 × 3.3 mm
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature ng Junction na Operasyon -55 C to +175 C —
Channel Type N-Channel —
Configuration Single —
Tindminan RoHS Compliant —
Level ng MSL 1 —
Packing Tape & Reel (T/R) —
Qualification Industrial (non-automotive) —
Uri ng Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Tc=25°C — 40 A
Pulsed Drain Current (IDM) — 160 A
RDS(on) max at VGS=10V — 13 mΩ
RDS(on) typical — 10 mΩ
Maximum Power Dissipation (Tc) — 68 W
Hanay ng Temperature na Operasyon — -55°C to +175°C (TJ)
Automotive Qualification — AEC-Q101 qualified
Lead-Free / RoHS — ROHS3 Compliant

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita