IPD60R145CFD7ATMA1 vs IPD082N10N3GATMA1 比較

詳細並排比較 IPD60R145CFD7ATMA1 由 Infineon 與 IPD082N10N3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IPD60R145CFD7ATMA1 IPD082N10N3GATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Technology CoolMOS CFD7 (superjunction) OptiMOS 3 (Trench N-Channel)
Drain-Source Voltage (V<sub>DS</sub>) 600 V —
Continuous Drain Current (I<sub>D</sub>) 16 A (T<sub>C</sub> = 25C) —
On-Resistance R<sub>DS(on)</sub> max 145 mOhm —
Power Dissipation (P<sub>D</sub>) 83 W (T<sub>C</sub> = 25C) —
Gate Threshold Voltage V<sub>GS(th)</sub> [DATA_NEEDED: Vth typical/min/max] —
封裝 TO-252AA (DPAK) surface mount —
Body Diode Integrated fast body diode (low Q<sub>rr</sub>) —
工作溫度 -55C to +150C (junction) —
安裝類型 Surface Mount (DPAK, 3-pin + tab) Surface Mount
腳位數 3 (Gate, Drain, Source) 3 (Gate, Drain, Source)
Series CoolMOS CFD7 —
MSL 等級 [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
RoHS 狀態 Compliant Compliant
Target Application ZVS / LLC resonant converters, soft switching —
Part Number — IPD082N10N3GATMA1
Manufacturer — Infineon Technologies
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) @ Tc=25°C — 80 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10 V — 8.2 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (PD) @ Tc=25°C — 125 W
工作接面溫度 — -55°C to +175°C
封裝 / 外殼 — PG-TO252-3 (DPAK), surface mount
Automotive Qualified (AEC-Q101) — Not applicable (industrial/consumer grade)
Lead-Free — Yes

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