IPD60R145CFD7ATMA1 vs IPD082N10N3GATMA1 Perbandingan

Perbandingan bersamaan detil IPD60R145CFD7ATMA1 dari Infineon dan IPD082N10N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD60R145CFD7ATMA1 IPD082N10N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology CoolMOS CFD7 (superjunction) OptiMOS 3 (Trench N-Channel)
Drain-Source Voltage (V<sub>DS</sub>) 600 V —
Continuous Drain Current (I<sub>D</sub>) 16 A (T<sub>C</sub> = 25C) —
On-Resistance R<sub>DS(on)</sub> max 145 mOhm —
Power Dissipation (P<sub>D</sub>) 83 W (T<sub>C</sub> = 25C) —
Gate Threshold Voltage V<sub>GS(th)</sub> [DATA_NEEDED: Vth typical/min/max] —
Paket TO-252AA (DPAK) surface mount —
Body Diode Integrated fast body diode (low Q<sub>rr</sub>) —
Suhu Kerja -55C to +150C (junction) —
Tipe Mounting Surface Mount (DPAK, 3-pin + tab) Surface Mount
Jumlah Pin 3 (Gate, Drain, Source) 3 (Gate, Drain, Source)
Series CoolMOS CFD7 —
Level MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Target Application ZVS / LLC resonant converters, soft switching —
Part Number — IPD082N10N3GATMA1
Manufacturer — Infineon Technologies
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) @ Tc=25°C — 80 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10 V — 8.2 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (PD) @ Tc=25°C — 125 W
Suhu Hubung Kerja — -55°C to +175°C
Paket / Case — PG-TO252-3 (DPAK), surface mount
Automotive Qualified (AEC-Q101) — Not applicable (industrial/consumer grade)
Lead-Free — Yes

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon