IPD60R145CFD7ATMA1 vs IPD082N10N3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R145CFD7ATMA1 disebabkan oleh Infineon dan IPD082N10N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD60R145CFD7ATMA1 IPD082N10N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology CoolMOS CFD7 (superjunction) OptiMOS 3 (Trench N-Channel)
Drain-Source Voltage (V<sub>DS</sub>) 600 V —
Continuous Drain Current (I<sub>D</sub>) 16 A (T<sub>C</sub> = 25C) —
On-Resistance R<sub>DS(on)</sub> max 145 mOhm —
Power Dissipation (P<sub>D</sub>) 83 W (T<sub>C</sub> = 25C) —
Gate Threshold Voltage V<sub>GS(th)</sub> [DATA_NEEDED: Vth typical/min/max] —
Kemasan TO-252AA (DPAK) surface mount —
Body Diode Integrated fast body diode (low Q<sub>rr</sub>) —
Suhu Operasi -55C to +150C (junction) —
Jenis Pemasangan Surface Mount (DPAK, 3-pin + tab) Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) 3 (Gate, Drain, Source)
Series CoolMOS CFD7 —
Aras MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Target Application ZVS / LLC resonant converters, soft switching —
Part Number — IPD082N10N3GATMA1
Manufacturer — Infineon Technologies
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) @ Tc=25°C — 80 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10 V — 8.2 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (PD) @ Tc=25°C — 125 W
Suhu Hubungan Operasi — -55°C to +175°C
Kemasan / Case — PG-TO252-3 (DPAK), surface mount
Automotive Qualified (AEC-Q101) — Not applicable (industrial/consumer grade)
Lead-Free — Yes

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