IPL65R230C7AUMA1 vs IPL60R105P7AUMA1 比較

詳細並排比較 IPL65R230C7AUMA1 由 Infineon 與 IPL60R105P7AUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPL65R230C7AUMA1 IPL65R230C7AUMA1 - 650V CoolMOS C7 MOSFET 230mOhm | Infineon

IPL65R230C7AUMA1 - 650V CoolMOS C7 MOSFET 230mOhm | Infineon

IPL65R230C7AUMA1 ✓ 啟用中

規格比較

參數 IPL65R230C7AUMA1 IPL60R105P7AUMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C7 CoolMOS P7
電晶體類型 N-Channel MOSFET —
Technology Superjunction (CoolMOS C7) Superjunction (SJ) N-Channel Power MOSFET
Drain-Source Voltage (VDS) 650 V 600 V
Continuous Drain Current (ID) at Tc 10 A 33 A
Power Dissipation (PD) at Tc 67 W —
Drain-Source On-Resistance (RDS(on)) max 230 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Gate Charge (Qg) [DATA_NEEDED: Qg typical at VGS=10V] —
工作接面溫度 -55 C to +150 C —
封裝 PG-VSON-4 (surface mount, 4 pins) PG-VSON-4 (4-pin SMD with exposed pad)
安裝類型 Surface Mount Surface Mount
ESD Protection Yes (integrated, per datasheet) —
RoHS 狀態 Compliant Compliant
無鹵素 Yes (per Infineon product page) Yes
MSL 等級 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
On-Resistance (RDS(on)) max — 105 mΩ
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (Ptot) at Tc — 137 W
Gate Threshold Voltage (VGS(th)) typ — 3.5 V
Gate Charge (Qg) typ — 45 nC
工作溫度範圍 — -55C to +150C
Channel Type — N-Channel
Lead-Free — Yes

資料表與資源

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