IPL65R230C7AUMA1 vs IPL60R105P7AUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPL65R230C7AUMA1 disebabkan oleh Infineon dan IPL60R105P7AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPL65R230C7AUMA1 IPL60R105P7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C7 CoolMOS P7
Jenis Transistor N-Channel MOSFET —
Technology Superjunction (CoolMOS C7) Superjunction (SJ) N-Channel Power MOSFET
Drain-Source Voltage (VDS) 650 V 600 V
Continuous Drain Current (ID) at Tc 10 A 33 A
Power Dissipation (PD) at Tc 67 W —
Drain-Source On-Resistance (RDS(on)) max 230 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Gate Charge (Qg) [DATA_NEEDED: Qg typical at VGS=10V] —
Suhu Hubungan Operasi -55 C to +150 C —
Kemasan PG-VSON-4 (surface mount, 4 pins) PG-VSON-4 (4-pin SMD with exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
ESD Protection Yes (integrated, per datasheet) —
Status RoHS Compliant Compliant
Boson Bebas Yes (per Infineon product page) Yes
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
On-Resistance (RDS(on)) max — 105 mΩ
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (Ptot) at Tc — 137 W
Gate Threshold Voltage (VGS(th)) typ — 3.5 V
Gate Charge (Qg) typ — 45 nC
Gambaran Suhu Operasi — -55C to +150C
Channel Type — N-Channel
Lead-Free — Yes

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