IPL65R230C7AUMA1 vs IPL60R105P7AUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPL65R230C7AUMA1 sa pamamagitan ng Infineon at IPL60R105P7AUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPL65R230C7AUMA1 IPL65R230C7AUMA1 - 650V CoolMOS C7 MOSFET 230mOhm | Infineon

IPL65R230C7AUMA1 - 650V CoolMOS C7 MOSFET 230mOhm | Infineon

IPL65R230C7AUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPL65R230C7AUMA1 IPL60R105P7AUMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C7 CoolMOS P7
Uri ng Transistor N-Channel MOSFET —
Technology Superjunction (CoolMOS C7) Superjunction (SJ) N-Channel Power MOSFET
Drain-Source Voltage (VDS) 650 V 600 V
Continuous Drain Current (ID) at Tc 10 A 33 A
Power Dissipation (PD) at Tc 67 W —
Drain-Source On-Resistance (RDS(on)) max 230 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Gate Charge (Qg) [DATA_NEEDED: Qg typical at VGS=10V] —
Temperature ng Junction na Operasyon -55 C to +150 C —
Packhaging PG-VSON-4 (surface mount, 4 pins) PG-VSON-4 (4-pin SMD with exposed pad)
Uri ng Pagpapasok Surface Mount Surface Mount
ESD Protection Yes (integrated, per datasheet) —
Tindminan RoHS Compliant Compliant
Wala sa Halogen Yes (per Infineon product page) Yes
Level ng MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
On-Resistance (RDS(on)) max — 105 mΩ
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (Ptot) at Tc — 137 W
Gate Threshold Voltage (VGS(th)) typ — 3.5 V
Gate Charge (Qg) typ — 45 nC
Hanay ng Temperature na Operasyon — -55C to +150C
Channel Type — N-Channel
Lead-Free — Yes

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